zxtc2045e6 document number: ds33645 rev: 3 - 2 1 of 6 www.diodes.com march 2015 ? diodes incorporated zxtc2045e6 advance information a product line of diodes incorporated 30v complementary medium power transistor in sot26 features ? npn + pnp combination ? bv ceo > 30 (-30)v ? bv cev > 40 (-40)v ? i cm = 5 (-5)a peak pulse current ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliabilit y ? ppap capable (note 4) description advanced process capability is used to achieve this high performance device. combining npn and pnp transistors, the sot2 6 package provides a compact solution for the intended applic ations. mechanical data ? case: sot26 ? case material: molded plastic, ?green? molding com pound; ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin plated leads; solder able per mil-std-202, method 208 ? weight: 0.015 grams (approximate) applications ? mosfet and igbt gate driving ? motor drive ordering information (notes 4 & 5) product compliance marking reel size (inches) tape width (mm) quantity per reel zxtc2045e6ta aec-q101 2045 7 8 3,000 zxtc2045e6qta automotive 2045 7 8 3,000 notes: 1. no purposely added lead. fully eu directi ve 2002/95/ec (rohs) & 2011/65/eu (rohs 2) complian t. 2. see http://www.diodes.com/ for more information about diodes incorporated?s definitions of halogen and antimony free, "green" and lead-free. 3. halogen and antimony free "green? products are d efined as those which contain <900ppm bromine, <900 ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec-q101 qualified and p pap capable. automotive, aec-q101 and standard prod ucts are electrically and thermally the same, except where specified. 5. for packaging details, go to our website at http ://www.diodes.com marking information date code key year 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 code c d e f g h i j k l m month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view device symbol sot26 top view pin-out c 1 e1 b 1 c 2 e2 b2 q1 q2 c 1 b1 c 2 e1 b2 e2 ym 2045 2045 = product type marking code ym = date code marking y or y = year (ex: c = 2015) m or m = month (ex: 9 = september) sot26
zxtc2045e6 document number: ds33645 rev: 3 - 2 2 of 6 www.diodes.com march 2015 ? diodes incorporated zxtc2045e6 advance information a product line of diodes incorporated absolute maximum ratings ? q1 (npn transistor) (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit collector-base voltage v cbo 40 v collector-emitter voltage v ce v 40 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 7 v continuous collector current i c 1.5 a peak pulsed collector current i cm 5 a base current i b 1 a absolute maximum ratings ? q2 (pnp transistor) (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit collector-base voltage v cbo -40 v collector-emitter voltage v ce v -40 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -7 v continuous collector current i c -1.5 a peak pulsed collector current i cm -5 a base current i b -1 a thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation linear derating factor (notes 6 & 10) p d 0.7 5.6 w mw/c (notes 7 & 10) 0.9 7.2 (notes 7 & 11) 1.1 8.8 (notes 8 & 10) 1.1 8.8 (notes 9 & 10) 1.7 13.6 thermal resistance, junction to ambient (notes 6 & 10) r ja 179 c/w (notes 7 & 10) 139 (notes 7 & 11) 113 (notes 8 & 10) 113 (notes 9 & 10) 73 thermal resistance, junction to lead (note 12) r jl 95.50 operating and storage temperature range t j , t stg -55 to +150 c esd ratings (note 13) characteristic symbol value unit jedec class electrostatic discharge - human body model esd hbm 4,000 v 3a electrostatic discharge - machine model esd mm 400 v c notes: 6. for a device surface mounted on 15mm x 15 mm fr4 pcb with high coverage of single sided 1oz c opper, in still air conditions; the device is measu red when operating in a steady-state condition. 7. same as note 6, except the device is surface mou nted on 25mm x 25mm 1oz copper. 8. same as note 6, except the device is surface mou nted on 50mm x 50mm 2oz copper. 9. same as note 8, except the device is measured at t < 5 seconds. 10. for device with one active die, both collectors attached to a common heatsink. 11. for device with two active die running at equal power, split heatsink 50% to each collector. 12. thermal resistance from junction to solder-poin t (at the end of the collector lead). 13. refer to jedec specification jesd22-a114 and je sd22-a115.
zxtc2045e6 document number: ds33645 rev: 3 - 2 3 of 6 www.diodes.com march 2015 ? diodes incorporated zxtc2045e6 advance information a product line of diodes incorporated thermal characteristics and derating information
zxtc2045e6 document number: ds33645 rev: 3 - 2 4 of 6 www.diodes.com march 2015 ? diodes incorporated zxtc2045e6 advance information a product line of diodes incorporated electrical characteristics ? q1 (npn transistor) (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics collector-base breakdown voltage bv cbo 40 - ? v i c = 100a, i e = 0 collector-emitter breakdown voltage bv ce v 40 - ? v i c = 1a, 0.25v > v be > 1.0v collector-emitter breakdown voltage (note 14) bv ceo 30 - ? v i c = 10ma, i b = 0 emitter-base breakdown voltage bv ebo 7 8.3 ? v i e = 100a, i c = 0 collector cut-off current i cbo ? <1 20 na v cb = 32v collector cut-off current i ce s/r ? <1 20 na v ce = 16v, r 1k emitter cut-off current i ebo ? <1 20 na v e b = 6v on characteristics (note 14) dc current gain h fe 180 300 500 ? i c = 100ma, v ce = 2v collector-emitter saturation voltage v ce(sat) ? ? 375 mv i c = 750ma, i b = 15ma base-emitter saturation voltage v be(sat) ? ? 1,200 mv i c = 750ma, i b = 15ma small signal characteristics output capacitance c obo ? 9 20 pf v cb = 10v, f = 1.0mhz current gain-bandwidth product f t ? 265 ? mhz v ce = 10v, i c = 50ma, f = 100mhz delay time t d ? 10 ? ns v cc = 10v, i c = 1a i b1 = -i b2 = 50ma rise time t r ? 12 ? ns storage time t s ? 185 ? ns fall time t f ? 45 ? ns electrical characteristics ? q2 (pnp transistor) (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics collector-base breakdown voltage bv cbo -40 - ? v i c = -100a, i e = 0 collector-emitter breakdown voltage bv ce v -40 - ? v i c = -1a, 0.25v < v be < 1.0v collector-emitter breakdown voltage (note 14) bv ceo -30 - ? v i c = -10ma, i b = 0 emitter-base breakdown voltage bv ebo -7 -8.3 ? v i e = -100a, i c = 0 collector cut-off current i cbo ? <-1 -20 na v cb = -32v collector cut-off current i ces/r ? <-1 -20 na v ce = -16v, r 1k emitter cut-off current i ebo ? <-1 -20 na v eb = -6v on characteristics (note 14) dc current gain h fe 180 300 500 ? i c = -100ma, v ce = -2v collector-emitter saturation voltage v ce(sat) ? ? -375 mv i c = -750ma, i b = -15ma base-emitter saturation voltage v be(sat) ? ? -1,200 mv i c = -750ma, i b = -15ma small signal characteristics output capacitance c obo ? 9 20 pf v cb = -10v, f = 1.0mhz current gain-bandwidth product f t ? 195 ? mhz v ce = -10v, i c = -50ma, f = 100mhz delay time t d ? 16 ? ns v cc = -10v, i c = -1a i b1 = -i b2 = -50ma rise time t r ? 11 ? ns storage time t s ? 220 ? ns fall time t f ? 31 ? ns note: 14. measured under pulsed conditions. pulse w idth 300 s. duty cycle 2%.
zxtc2045e6 document number: ds33645 rev: 3 - 2 5 of 6 www.diodes.com march 2015 ? diodes incorporated zxtc2045e6 advance information a product line of diodes incorporated package outline dimensions please see ap02002 at http://www.diodes.com/datashe ets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datashe ets/ap02001.pdf for the latest version. sot26 dim min max typ a1 0.013 0.10 0.05 a 2 1.00 1.30 1.10 a3 0.70 0.80 0.75 b 0.35 0.50 0.38 c 0.10 0.20 0.15 d 2.90 3.10 3.00 e - - 0.95 e1 - - 1.90 e 2.70 3.00 2.80 e 1 1.50 1.70 1.60 l 0.35 0.55 0.40 a - - 8 a1 - - 7 all dimensions in mm dimensions value (in mm) c 2.40 c 1 0.95 g 1.60 x 0.55 y 0.80 y1 3.20 a1 d e e1 e b a2 a1 seating plane l c a e1 a3 c1 y1 g x y c
zxtc2045e6 document number: ds33645 rev: 3 - 2 6 of 6 www.diodes.com march 2015 ? diodes incorporated zxtc2045e6 advance information a product line of diodes incorporated important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranti es of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisd iction). diodes incorporated and its subsidiaries reserve th e right to make modifications, enhancements, improv ements, corrections or other changes without further notice to this document and any pro duct described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any cu stomer or user of this document or products describ ed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products pur chased through unauthorized sales channel. should customers purchase or use diodes incorporate d products for any unintended or unauthorized appli cation, customers shall indemnify and hold diodes incorporated and its representatives ha rmless against all claims, damages, expenses, and a ttorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized appl ication. products described herein may be covered by one or more united states, international or foreign patent s pending. product names and markings noted herein may also be covered by one or more uni ted states, international or foreign trademarks. this document is written in english but may be tran slated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes i ncorporated. life support diodes incorporated products are specifically not a uthorized for use as critical components in life su pport devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to per form when properly used in accordance with instruct ions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a lif e support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affe ct its safety or effectiveness. customers represent that they have all necessary ex pertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsi ble for all legal, regulatory and safety-related re quirements concerning their products and any use of diodes incorporated products in such safety- critical, life support devices or systems, notwiths tanding any devices- or systems-related information or support that may be provided by diod es incorporated. further, customers must fully ind emnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such saf ety-critical, life support devices or systems. copyright ? 2015, diodes incorporated www.diodes.com
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